Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Weight  

3.949996g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

173A Tc

Drive Voltage (Max Rds On, Min Rds On)  

6V 10V

Number of Elements  

1

Power Dissipation (Max)  

230W Tc

Turn Off Delay Time  

82 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3.7V @ 150μA

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®, StrongIRFET™

Published  

2013

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

230W

Case Connection  

DRAIN

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.3m Ω @ 100A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

7020pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

210nC @ 10V

Rise Time  

105ns

Drain to Source Voltage (Vdss)  

60V

Vgs (Max)  

±20V

Fall Time (Typ)  

84 ns

Continuous Drain Current (ID)  

173A

Gate to Source Voltage (Vgs)  

20V

Pulsed Drain Current-Max (IDM)  

700A

DS Breakdown Voltage-Min  

60V

Avalanche Energy Rating (Eas)  

554 mJ

Height  

4.83mm

Length  

10.67mm

Width  

9.65mm

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free